Polymer Field-Effect Transistor Gated Via a Poly(Styrenesulfonic Acid) Thin Film

Author: 
Said, E., Crispin, X., Herlogsson, L., Elhag, S., Robinson, N. D. and Berggren, M.
Type of publication: 
Journal article
Abstract: 

A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1 ms) and operates at low voltages (<1 V). The results presented are relevant for low-cost printed polymer electronics.

Year: 
2006
Link to full publication: 
http://apl.aip.org/resource/1/applab/v89/i14/p143507_s1?bypassSSO=1
Published in: 
Applied Physics Letters