Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices.

Author: 
Esteve, R., Reshanov, S. A., Schöner, A.,  and Zetterling, C.-M.
Type of publication: 
Conference item
Year: 
2010
Published in: 
Silicon Carbide 2010 — Materials, Processing, and Devices, Mater. Res. Soc. Symp. Proc. Volume 1246 (2010), 1246-B06-04.