Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

Gustafsson, O., Karim, A., Wang, Q., Berggren, J., Asplund, C., Andersson, J.Y., Hammar, M,.
Type of publication: 
Journal article

We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.

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Infrared Physics & Technology 59, 89-92