Long-wavelength infrared photoluminescence from InGaSb/InAs quantum dots

Author: 
Gustafsson, O., Karim, A., Wang, Q., Berggren, J., Asplund, C., Andersson, J.Y., Hammar, M,.
Type of publication: 
Journal article
Abstract: 

We study the growth of self-assembled InGaSb/InAs quantum dots (QDs) and investigate how gallium can be used to reduce the optical transition energy in the InSb QD system. InGaSb QDs were grown on InAs (0 0 1) substrates by metal-organic vapor-phase epitaxy (MOVPE) and the material was characterized by photoluminescence (PL) measurements. A PL peak wavelength is demonstrated beyond 8 μm at 77 K, which is significantly longer than what has been reported for InSb QDs. The results suggest that InGaSb QDs can be grown at a larger size than InSb QDs leading to reduced confinement in the QDs.

Year: 
2013
Link to full publication: 
http://www.sciencedirect.com/science/article/pii/S1350449512001351
Published in: 
Infrared Physics & Technology 59, 89-92