Impact of Package Parasitics on Switching Performance

Author: 
Kostov, K., Lim J.-K., Zhang Y., Bakowski M.
Type of publication: 
Conference item
Abstract: 

The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.

Year: 
2015
Official URL: 
http://www.ttp.net/0255-5476.html
Location: 
Giardini Naxos Silcily
Italy
IT
Published in: 
Materials Science Forum