Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)

Author: 
Esteve, R., Lorenzzi, J., Reshanov, S.A., Jegenyes, N., Schöner, A., Ferro, G.,  and Zetterling, C.-M.
Type of publication: 
Conference item
Year: 
2010
Published in: 
AIP Conference Proceedings 1292(1), (2010), 55-59